- Title
- Comparative analysis of Ti₃SiC₂ and associated compounds using x-ray diffraction and x-ray photoelectron spectroscopy
- Creator
- Riley, D. P.; O'Connor, D. J.; Dastoor, P. C.; Brack, N.; Pigram, P. J.
- Relation
- Journal of Physics D: Applied Physics Vol. 35, p. 1603-1611
- Publisher Link
- http://dx.doi.org/10.1088/0022-3727/35/13/324
- Publisher
- Institute of Physics (IOP) Publishing
- Resource Type
- journal article
- Date
- 2002
- Description
- Ti₃SiC₂ exhibits a unique combination of ceramic and metallic properties suitable for both electrical and mechanical application. With high-temperature stability, high electrical and thermal conductivity and resistance to oxidation, Ti₃SiC₂ has proven promising as a contact layer for high power SiC semiconductors. However, until recently, synthesis of this material has proven difficult without appreciable quantities (<2 vol{%}) of impurity phases, namely TiC₁₋x and Ti₅Si₃Cx. As such, many properties of this compound are as yet unknown. In this paper, a comparable analysis of Ti₃SiC₂ and associated compounds, TiC and Ti₅Si₃Cx has been performed using both x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). Assessing impurity sensitivities for each technique, XRD was shown to readily identify impurities of TiC and Ti₅Si₃Cx within Ti₃SiC₂ at <2 wt{%}. Although XPS could not independently resolve these impurities, its use resulted in the detection of a complex oxide structure on Ti₃SiC₂. It was speculated that it was composed of mixed C-Ti-C-O and Si-Ti-C-O bond chemistries. In a comparison of TiC, Ti₅Si₃Cx and Ti₃SiC₂, differences in oxide states suggest that oxidation is chemically dissimilar for all the three compounds. However, upon etching, the binding energies of Ti₃SiC₂ and Ti₅Si₃Cx were shown to be very similar. It may be concluded that a concurrent analysis of both XRD and XPS was essential for identifying the overall surface chemistry of Ti₃SiC₂.
- Subject
- Ti₃SiC₂; x-ray diffraction; x-ray photoelectron spectroscopy
- Identifier
- http://hdl.handle.net/1959.13/33864
- Identifier
- uon:3332
- Identifier
- ISSN:0022-3727
- Rights
- Sherpa: post-print needed. plaese delete excess author field. aob 05/01/09
- Language
- eng
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